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• Axial Glass Package

Axial Glass Package

Data sheet	Part Number	Description	Features	Application	VR	Rfs(typ)		Ct(typ)		Power Dissi- pation	Enviro- nmental
	(Package)						condition		condition
	L204BB (DO-35)	Designed for solid-state current control between radio BC and 1GHz bands used in variable resistance attenuator Long carrier lifetime PIN Diode	Operating as variable resistance attenuator in linearly high-frequency bands by reverse bias current Having a long carrier lifetime, high quality intermodulation spurious characteristics Power resistance 30V	Variable resistance attenuator	30V	5.5Ω	IF=10ｍA f=50MHz	0.7pF	VR=15V f=1MHz	200mW
	L407CD (DO-41)	Designed for solid-state antenna switches of high-frequency power switch used in commercial two-way radios Diffusion PIN Diode	Available power switching in VHF and UHF bands Low capacitance at zero bias, extremely low dependence of reverse bias Low series resistance Low insertion loss, high isolation Low harmonic distortion in transmitting and receiving	High-frequency power switch	180V	0.65Ω	IF=50ｍA f=470MHz	1.6pF	VR=0V f=100MHz	1W

Please kindly be noted the contents herein to be changed to make corrections, modifications, enhancements, improvements or others.



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• Ceramic MELF Package

Ceramic MELF Package

Data sheet	Part Number	Description	Features	Application	VR	Rfs(typ)		Ct(typ)		Power Dissi- pation	Enviro- nmental
	（Package）						condition		condition
	L8104 (3.5×2.2×2.2mm：Max) (Ceramic MELF)	Designed for solid-state antenna switches of high-frequency power switch used in commercial two-way radios	Available power switching in VHF and UHF bands Low capacitance and extremely low dependency with reverse bias Low insertion loss with high isolation Low series resistance	High-frequency power switch	180V	0.5Ω	IF=50ｍA f=100MHz	0.8pF	VR=40V f=100MHz	3W
	L8104-240 (3.5×2.2×2.2mm：Max) (Ceramic MELF)	Designed for solid-state antenna switches of high-frequency power switch used in commercial two-way radios	Very low reverse current Very low insertion loss, high isolation Low series resistance Repetitive peak reverse voltage 240V	High-frequency power switch	240V	0.5Ω	IF=50ｍA f=100MHz	1.2pF	VR=40V f=100MHz	3W
	L8107 (3.5×2.2×2.2mm：Max) (Ceramic MELF)	Designed for solid state antenna switching applications in mobile radios.The L8107 PIN diode employs a square outline which makes it suitable for reflow assembly on surface mounting.	High power handling High zero bias impedance Low capacitance High parallel resistance High isolation	High-frequency power switch	90V	1.2Ω	IF=50ｍA	0.4pF	VR=40V	1W

Please kindly be noted the contents herein to be changed to make corrections, modifications, enhancements, improvements or others.



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• Molded Plastic Package　

Molded Plastic Package

Data sheet	Part Number	Description	Features	Application	VR	Rfs(typ)		Ct(typ)		Power Dissi- pation	Enviro- nmental
	（package）						condition		condition
	L5204F (2.5×1.2×0.8ｍｍ (typ)) (Plastic mold)	Designed for solid-state antenna switch of high-frequency power switch used in commercial two-way radios. Silicon PIN Diode	Available power switching in VHF and UHF bands Low capacitance and extremely low dependency with reverse bias Low insertion loss with high isolation Low series resistance	High-frequency power switch	180V	0.5Ω	IF=50ｍA f=100MHz	0.6pF	VR=40V f=100MHz	500mW
	L5208F (1.7×0.9×0.8mm (typ)) (Plastic mold)	Designed for solid-state antenna switch of High frequency power switch used in commercial portable two-way radios.	Available power switching in VHF and UHF bands Low series resistance Low capacitance	High-frequency power switch	35V	0.45Ω	IF=10mA f=100MHz	0.6pF	VR=20V f=100MHz	300mW
	L5206F (1.7 x 0.9 x 0.5mm (typ)) (Plastic mold)	Designed for solid-state antenna switch of high-frequency power switch used in commercial two-way radios. Silicon PIN Diode	Low series resistance Low insertion loss Low capacitance High isolation	High-frequency power switch	180V	1.0Ω	IF=50ｍA f=100MHz	0.15pF	VR=40V f=100MHz	300mW

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